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| HWL32NPA L-Band GaAs Power FET Autumn 2002 V1 Features * * Outline Dimensions Plastic Packaged GaAs Power FET Suitable for Commercial Wireless Applications High Efficiency 3V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain 2 1 3 * * Description The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +7V -5V IDSS 6 mA 150C -65 to +150C 2.8 Watt PA Package (SOT-89) * mounted on an infinite heat sink. Electrical Specifications (TA=25C) f=1900 MHz for all RF Tests Symbol IDSS VP Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Pinch-off Voltage at VDS=3V, ID=55mA Transconductance at VDS=3V, ID=550mA Thermal Resistance Power Output at Test Points VDS=3V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS Units mA V mS C/W dBm dB % Min. 900 -3.5 400 27.5 Typ. 1100 -2.0 550 30 28.5 8.5 40.0 Max. 1500 -1.5 35 - gm Rth P1dB G1dB PAE Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL32NPA L-Band GaAs Power FET Autumn 2002 V1 Typical Performance at 25C Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V, IDS=0.5IDSS Po (dBm) 40 PAE (%) 60 50 30 40 20 Gain 10 10 0 0 5 10 15 20 0 Pin (dBm) 30 20 Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V, IDS=0.5IDSS Po (dBm) 40 PAE (%) 60 50 30 40 20 Gain 10 10 0 0 5 10 15 20 25 0 Pin (dBm) 30 20 Po Gain Eff Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL32NPA L-Band GaAs Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Frequency @ Vds= 3V, Ids= 550 mA Po (dBm) 40 PAE (%) 80 30 60 Po Gain PAE 20 Gain 10 40 20 0 0.7 0.8 0.9 1.0 1.1 0 f (GHz) Power Derating Curve Total Power Dissipation,PT (W) 4 (25,2.8) 2 (150,0) 0 0 50 100 150 Case Temperature,TC () Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL32NPA L-Band GaAs Power FET Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=3V, IDS=0.5IDSS (GHz) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 lS11l 0.847 0.844 0.856 0.856 0.862 0.862 0.868 0.868 0.866 0.872 0.872 0.871 0.869 0.874 0.879 0.879 0.872 0.865 0.876 0.873 0.874 0.869 0.862 0.861 0.862 0.852 0.850 0.844 0.834 0.832 0.828 0.821 0.820 0.808 0.803 0.797 ANG -128.306 -136.718 -143.154 -148.276 -152.368 -155.481 -158.908 -161.365 -163.564 -165.570 -167.487 -169.164 -171.012 -172.509 -173.858 -175.460 -176.624 -178.177 -179.226 179.431 178.752 177.380 176.088 175.077 173.963 172.530 171.050 169.222 168.241 166.589 165.210 163.173 161.436 159.505 157.624 155.678 lS21l 4.442 4.000 3.522 3.172 2.872 2.616 2.412 2.245 2.088 1.978 1.863 1.760 1.678 1.611 1.536 1.479 1.414 1.362 1.321 1.290 1.246 1.213 1.186 1.160 1.134 1.121 1.092 1.069 1.064 1.037 1.021 1.002 1.002 0.988 0.987 0.982 ANG 111.231 106.224 100.835 98.118 94.301 90.899 88.220 85.420 83.210 80.247 78.438 75.740 73.872 71.361 69.077 67.352 64.792 63.247 61.095 59.408 57.332 55.693 53.633 51.576 49.861 47.820 45.231 43.334 41.513 39.114 37.141 35.435 33.449 31.697 29.197 27.141 lS12l 0.028 0.031 0.032 0.035 0.037 0.039 0.042 0.043 0.046 0.049 0.052 0.053 0.056 0.059 0.062 0.065 0.067 0.068 0.072 0.075 0.078 0.081 0.084 0.088 0.092 0.095 0.099 0.103 0.108 0.110 0.110 0.111 0.116 0.119 0.124 0.128 ANG 48.401 48.174 47.325 47.638 47.811 48.019 48.290 47.880 48.040 47.287 47.738 47.700 47.632 47.201 46.497 45.982 45.512 45.127 44.685 44.208 43.382 43.133 42.183 40.816 40.051 39.070 37.071 36.394 34.173 31.864 30.261 29.245 28.819 28.357 26.807 25.641 lS22l 0.766 0.766 0.770 0.777 0.772 0.767 0.777 0.773 0.768 0.765 0.775 0.765 0.766 0.761 0.773 0.765 0.763 0.765 0.764 0.756 0.756 0.748 0.747 0.745 0.738 0.731 0.734 0.736 0.720 0.723 0.719 0.727 0.713 0.714 0.704 0.693 ANG 176.247 174.387 172.215 171.483 169.310 167.360 165.642 163.921 163.205 159.987 159.792 156.918 156.303 153.655 151.523 150.998 147.956 147.832 145.725 145.341 142.567 142.490 140.086 138.293 137.355 136.238 133.062 133.546 131.820 129.938 129.069 127.882 126.743 125.311 122.809 121.255 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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